CHIPNOBO
Semiconductor Replacement Engineering & Supply Continuity
Single FETs, MOSFETs
PRODUCT DATASHEET
ChipNobo MPN
NB160N120SC1
GLOBAL BRAND CROSS-REFERENCE
onsemi
SILICON CARBIDE MOSFET, NCHANNEL
NVC160N120SC1
- High-reliability design
- Long-term stable supply
- RoHS compliant
- AEC-Q101 Design Reference
SILICON CARBIDE MOSFET, NCHANNEL
1. PRODUCT POSITIONING
NB160N120SC1 is a product identity corresponding to the reference product NVC160N120SC1. This document presents the available product specifications, mechanical/package information and compatibility summary for engineering and procurement reference.
This document is a product information. Compatibility conclusions should be read together with the applicable Cross-Reference Identification (CID) rule, package/pin verification and engineering review record.
| 2. TECHNICAL SPECIFICATION COMPARISON (core parameters) | |||
|---|---|---|---|
| Parameter | onsemi NVC160N120SC1 | ChipNobo NB160N120SC1 | Match |
| Part Status | Active | Active | ✓ |
| Mounting Type | Surface Mount | Surface Mount | ✓ |
| FET Type | N-Channel | N-Channel | ✓ |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | ✓ |
| Grade | Automotive | Automotive | ✓ |
| Qualification | AEC-Q101 | AEC-Q101 | ✓ |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) | 17A (Tc) | ✓ |
| Package / Case | Die | Die | ✓ |
| Supplier Device Package | Die | Die | ✓ |
| Drain to Source Voltage (Vdss) | 1200 V | 1200 V | ✓ |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | 20V | ✓ |
| Technology | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) | ✓ |
| Power Dissipation (Max) | 119W (Tc) | 119W (Tc) | ✓ |
| Vgs (Max) | +25V, -15V | +25V, -15V | ✓ |
| Rds On (Max) @ Id, Vgs | 224mOhm @ 12A, 20V | 224mOhm @ 12A, 20V | ✓ |
| Vgs(th) (Max) @ Id | 4.3V @ 2.5mA | 4.3V @ 2.5mA | ✓ |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 20 V | 34 nC @ 20 V | ✓ |
| Input Capacitance (Ciss) (Max) @ Vds | 665 pF @ 800 V | 665 pF @ 800 V | ✓ |