CHIPNOBO
Semiconductor Replacement Engineering & Supply Continuity
Single FETs, MOSFETs
PRODUCT DATASHEET
ChipNobo MPN
NB65R060M2HXTMA1
GLOBAL BRAND CROSS-REFERENCE
Infineon Technologies
SILICON CARBIDE MOSFET
IMBG65R060M2HXTMA1
- High-reliability design
- Long-term stable supply
- RoHS compliant
1. PRODUCT POSITIONING
NB65R060M2HXTMA1 is a product identity corresponding to the reference product IMBG65R060M2HXTMA1. This document presents the available product specifications, mechanical/package information and compatibility summary for engineering and procurement reference.
This document is a product information. Compatibility conclusions should be read together with the applicable Cross-Reference Identification (CID) rule, package/pin verification and engineering review record.
| 2. TECHNICAL SPECIFICATION COMPARISON (core parameters) | |||
|---|---|---|---|
| Parameter | Infineon Technologies IMBG65R060M2HXTMA1 | ChipNobo NB65R060M2HXTMA1 | Match |
| Part Status | Active | Active | ✓ |
| Mounting Type | Surface Mount | Surface Mount | ✓ |
| FET Type | N-Channel | N-Channel | ✓ |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | ✓ |
| Package / Case | TO-263-8 D2PAK (7 Leads + Tab) TO-263CA | TO-263-8 D2PAK (7 Leads + Tab) TO-263CA | ✓ |
| Drain to Source Voltage (Vdss) | 650 V | 650 V | ✓ |
| Power Dissipation (Max) | 148W (Tc) | 148W (Tc) | ✓ |
| Technology | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) | ✓ |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V | 15V, 20V | ✓ |
| Current - Continuous Drain (Id) @ 25°C | 34.9A (Tc) | 34.9A (Tc) | ✓ |
| Vgs (Max) | +23V, -7V | +23V, -7V | ✓ |
| Supplier Device Package | PG-TO263-7-12 | PG-TO263-7-12 | ✓ |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 15.4A, 20V | 55mOhm @ 15.4A, 20V | ✓ |
| Vgs(th) (Max) @ Id | 5.6V @ 3.1mA | 5.6V @ 3.1mA | ✓ |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 18 V | 18 nC @ 18 V | ✓ |
| Input Capacitance (Ciss) (Max) @ Vds | 669 pF @ 400 V | 669 pF @ 400 V | ✓ |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ✓ |