CHIPNOBO
Semiconductor Replacement Engineering & Supply Continuity
Single FETs, MOSFETs
PRODUCT DATASHEET
ChipNobo MPN
NB019H120G3AG
GLOBAL BRAND CROSS-REFERENCE
STMicroelectronics
SIC MOSFET
SCT019H120G3AG
- High-reliability design
- Long-term stable supply
- RoHS compliant
- AEC-Q101 Design Reference
1. PRODUCT POSITIONING
NB019H120G3AG is a product identity corresponding to the reference product SCT019H120G3AG. This document presents the available product specifications, mechanical/package information and compatibility summary for engineering and procurement reference.
This document is a product information. Compatibility conclusions should be read together with the applicable Cross-Reference Identification (CID) rule, package/pin verification and engineering review record.
| 2. TECHNICAL SPECIFICATION COMPARISON (core parameters) | |||
|---|---|---|---|
| Parameter | STMicroelectronics SCT019H120G3AG | ChipNobo NB019H120G3AG | Match |
| Part Status | Active | Active | ✓ |
| Mounting Type | Surface Mount | Surface Mount | ✓ |
| FET Type | N-Channel | N-Channel | ✓ |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | ✓ |
| Grade | Automotive | Automotive | ✓ |
| Qualification | AEC-Q101 | AEC-Q101 | ✓ |
| Package / Case | TO-263-8 D2PAK (7 Leads + Tab) TO-263CA | TO-263-8 D2PAK (7 Leads + Tab) TO-263CA | ✓ |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | 100A (Tc) | ✓ |
| Drain to Source Voltage (Vdss) | 1200 V | 1200 V | ✓ |
| Technology | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) | ✓ |
| Power Dissipation (Max) | 555W (Tc) | 555W (Tc) | ✓ |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V | 15V, 18V | ✓ |
| Supplier Device Package | HU3PAK | HU3PAK | ✓ |
| Vgs (Max) | +18V, -5V | +18V, -5V | ✓ |
| Vgs(th) (Max) @ Id | 4.2V @ 2.3mA | 4.2V @ 2.3mA | ✓ |
| Gate Charge (Qg) (Max) @ Vgs | 121 nC @ 18 V | 121 nC @ 18 V | ✓ |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 50A, 18V | 28mOhm @ 50A, 18V | ✓ |
| Input Capacitance (Ciss) (Max) @ Vds | 3465 pF @ 800 V | 3465 pF @ 800 V | ✓ |