Discrete Semiconductor Products

IGBT Modules

Discrete power and switching devices. MOSFETs, diodes, transistors, and thyristors for power conversion, rectification, and high-current control.

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NTC Thermistor
Input Capacitance (Cies) @ Vce
Vce(on) (Max) @ Vge, Ic
IGBT Type
Current - Collector Cutoff (Max)
Configuration
Input
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
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Operating Temperature
Power - Max
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Showing 962 products

Product Description Package / Case Operating Temperature Compatibility Original MPN Action
NB450R12KE7PHPSA1 Module MEDIUM POWER 62MM Module -40°C ~ 175°C (TJ) 100% Pin-to-Pin FF450R12KE7PHPSA1 Infineon Technologies View
NB600R12KE7PHPSA1 Module MEDIUM POWER 62MM Module -40°C ~ 175°C (TJ) 100% Pin-to-Pin FF600R12KE7PHPSA1 Infineon Technologies View
NB20R06W1E3B3BPSA1 Module LOW POWER EASY Module 94 W · -40°C ~ 150°C (TJ) 100% Pin-to-Pin FP20R06W1E3B3BPSA1 Infineon Technologies View
NB450R12KE7PEHPSA1 Module MEDIUM POWER 62MM Module -40°C ~ 175°C (TJ) 100% Pin-to-Pin FF450R12KE7PEHPSA1 Infineon Technologies View
NBGT75NA60UF SOT-227-4, miniBLOC MODULES IGBT - SOT-227 IGBT SOT-227-4, miniBLOC 231 W · -40°C ~ 175°C (TJ) 100% Pin-to-Pin VS-GT75NA60UF Vishay General Semiconductor - Diodes Division View
NBGT75LA60UF SOT-227-4, miniBLOC MODULES IGBT - SOT-227 IGBT SOT-227-4, miniBLOC 231 W · -40°C ~ 175°C (TJ) 100% Pin-to-Pin VS-GT75LA60UF Vishay General Semiconductor - Diodes Division View
NB400N100H4Q2F2SG-R Module MASS MARKET 250KW 1500V Q2 PACK Module 959 W · -40°C ~ 175°C (TJ) 100% Pin-to-Pin NXH400N100H4Q2F2SG-R onsemi View
NB800A100L4Q2F2S1G Module MASS MARKET GEN3 Q2PACK POSITIVE Module 714 W · -40°C ~ 175°C (TJ) 100% Pin-to-Pin NXH800A100L4Q2F2S1G onsemi View
NB800A100L4Q2F2S2G Module MASS MARKET GEN3 Q2PACK NEGATIVE Module 714 W · -40°C ~ 175°C (TJ) 100% Pin-to-Pin NXH800A100L4Q2F2S2G onsemi View
NB240B120H3Q1S1G-R Module 150KW 110V Q1BOOST SOLDER PIN Module 266 W · -40°C ~ 150°C (TJ) 100% Pin-to-Pin NXH240B120H3Q1S1G-R onsemi View