Discrete Semiconductor Products

IGBT Modules

Discrete power and switching devices. MOSFETs, diodes, transistors, and thyristors for power conversion, rectification, and high-current control.

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NTC Thermistor
Input Capacitance (Cies) @ Vce
Vce(on) (Max) @ Vge, Ic
IGBT Type
Current - Collector Cutoff (Max)
Configuration
Input
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Supplier Device Package
Package / Case
Operating Temperature
Power - Max
Mounting Type
Part Status

Showing 962 products

Product Description Package / Case Operating Temperature Compatibility Original MPN Action
NB1800XTR17T2P5PBPSA1 Module XHP LV Module 1800000 W · -40°C ~ 175°C (TJ) 100% Pin-to-Pin FF1800XTR17T2P5PBPSA1 Infineon Technologies View
NB50R12N2T7B76BPSA1 Module LOW POWER ECONO Module -40°C ~ 175°C (TJ) 100% Pin-to-Pin FP50R12N2T7B76BPSA1 Infineon Technologies View
NB1400R12IP4B60BOSA1 Module PP IHM I Module 7650 W · -40°C ~ 150°C (TJ) 100% Pin-to-Pin FF1400R12IP4B60BOSA1 Infineon Technologies View
NB600R12IP4PB60BPSA1 Module PP IHM I Module -40°C ~ 150°C (TJ) 100% Pin-to-Pin FF600R12IP4PB60BPSA1 Infineon Technologies View
NB900R12IP4PB60BPSA1 Module PP IHM I Module 5100 W · -40°C ~ 150°C (TJ) 100% Pin-to-Pin FF900R12IP4PB60BPSA1 Infineon Technologies View
NB650R17IE4B60BPSA1 Module PP IHM I Module 4150 W · -40°C ~ 150°C 100% Pin-to-Pin FF650R17IE4B60BPSA1 Infineon Technologies View
NB900R17ME7WB11BPSA1 Module MEDIUM POWER ECONO Module -40°C ~ 175°C (TJ) 100% Pin-to-Pin FF900R17ME7WB11BPSA1 Infineon Technologies View
NB650R17IE4PB60BPSA1 Module PP IHM I Module 4150 W · -40°C ~ 150°C (TJ) 100% Pin-to-Pin DF650R17IE4PB60BPSA1 Infineon Technologies View
NB650R17IE4PB60BPSA1 Module PP IHM I Module 4150 W · -40°C ~ 150°C 100% Pin-to-Pin FF650R17IE4PB60BPSA1 Infineon Technologies View
NB900R12IP4DPB60BPSA1 Module PP IHM I Module 5100 W · -40°C ~ 150°C (TJ) 100% Pin-to-Pin DF900R12IP4DPB60BPSA1 Infineon Technologies View