Discrete Semiconductor Products

Single FETs, MOSFETs

Discrete power and switching devices. MOSFETs, diodes, transistors, and thyristors for power conversion, rectification, and high-current control.

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Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs
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Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Current - Continuous Drain (Id) @ 25°C
Drain to Source Voltage (Vdss)
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Showing 13478 products

Product Description Package / Case Operating Temperature Compatibility Original MPN Action
NB602LG-1 TO-264-3, TO-264AA MOSFET LINEAR 600 V 49 A TO-264 TO-264-3, TO-264AA 730W · -55°C ~ 150°C (TJ) 100% Pin-to-Pin APL602LG-1 Microchip Technology View
NB0650306LRMRXUSA1 8-VDFN Exposed Pad GS-065-030-6-LR-MR 8-VDFN Exposed Pad -55°C ~ 150°C (TJ) 100% Pin-to-Pin GS0650306LRMRXUSA1 Infineon Technologies View
NB66508TTRXUMA1 Die GS66508T-TR Die -55°C ~ 150°C (TJ) 100% Pin-to-Pin GS66508TTRXUMA1 Infineon Technologies View
NB0650302LTRXUMA1 8-VDFN Exposed Pad GS-065-030-2-L-TR 8-VDFN Exposed Pad -55°C ~ 150°C (TJ) 100% Pin-to-Pin GS0650302LTRXUMA1 Infineon Technologies View
NB0650182LTRXUMA1 8-VDFN Exposed Pad GS-065-018-2-L-TR 8-VDFN Exposed Pad -55°C ~ 150°C (TJ) 100% Pin-to-Pin GS0650182LTRXUMA1 Infineon Technologies View
NB0650182LMRXUSA1 8-VDFN Exposed Pad GS-065-018-2-L-MR 8-VDFN Exposed Pad -55°C ~ 150°C (TJ) 100% Pin-to-Pin GS0650182LMRXUSA1 Infineon Technologies View
NB66516BMRXUSA1 Die GS66516B-MR Die -55°C ~ 150°C (TJ) 100% Pin-to-Pin GS66516BMRXUSA1 Infineon Technologies View
NB66516TMRXUSA1 4-SMD, No Lead GS66516T-MR 4-SMD, No Lead -55°C ~ 150°C (TJ) 100% Pin-to-Pin GS66516TMRXUSA1 Infineon Technologies View
NB66516BTRXUMA1 Die GS66516B-TR Die -55°C ~ 150°C (TJ) 100% Pin-to-Pin GS66516BTRXUMA1 Infineon Technologies View
NB66508BMRXUSA1 Die GS66508B-MR Die -55°C ~ 150°C (TJ) 100% Pin-to-Pin GS66508BMRXUSA1 Infineon Technologies View