NB66AP6NBQAGJ

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Global Brand Reference

Product type
Memory
Description
IC DRAM 1GBIT LVSTL 200TFBGA
Original MPN
W66AP6NBQAGJ
Manufacturer
Winbond Electronics

ChipNobo MPN

NB66AP6NBQAGJ

  • High-reliability design
  • Long-term stable supply
  • RoHS compliant

Technical specification comparison (core parameters)

Parameter Winbond ElectronicsW66AP6NBQAGJ ChipNoboNB66AP6NBQAGJ Match
Part Status Active Active
Mounting Type Surface Mount Surface Mount
Memory Type Volatile Volatile
Operating Temperature -40°C ~ 105°C (TC) -40°C ~ 105°C (TC)
Memory Size 1Gbit 1Gbit
Memory Format DRAM DRAM
Memory Organization 64M x 16 64M x 16
Access Time 3.6 ns 3.6 ns
Technology SDRAM - Mobile LPDDR4 SDRAM - Mobile LPDDR4
Voltage - Supply 1.06V ~ 1.17V, 1.7V ~ 1.95V 1.06V ~ 1.17V, 1.7V ~ 1.95V
Package / Case 200-TFBGA 200-TFBGA
Supplier Device Package 200-TFBGA (10x14.5) 200-TFBGA (10x14.5)
Memory Interface LVSTL_11 LVSTL_11
Write Cycle Time - Word, Page 18ns 18ns
Clock Frequency 1.867 GHz 1.867 GHz
RoHS Status ROHS3 Compliant ROHS3 Compliant

Supply & lifecycle

Lifecycle status Active
NRND No
EOL No
PCN monitor No
Last buy date No Deadline
Alternate availability Sufficient
Application areas
AI Server GPU Server
AI Accelerator Server Data Center Switch
Laptop Notebook Smartphone
ADAS Camera System Smart Cockpit
5G Base Station Industrial Computer
Semiconductor Equipment Medical Imaging Equipment

Compatibility verification

Package Match
Pin Match
Electrical Match
Operating Range Match
Qualification Match
Pin-to-pin Compatible

Pin-to-Pin Replacement Solutions

100% Pin-to-Pin Compatible • Same Package • Same Key Electrical Parameters • Same Application

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